| PART |
Description |
Maker |
| MRF5S21150SR3 |
MRF5S21150, MRF5S21150R3, MRF5S21150S, MRF5S21150SR3 2170 Mhz, 33 W Avg., 2 X W-CDMA, 28 V Lateral N-channel RF Power MOSFETs
|
MOTOROLA
|
| MRF5S21130HSR3 MRF5S21130HR3 |
2170 MHz, 28 W AVG., 28 V, 2 x W–CDMA, Lateral N–Channel RF Power MOSFET
To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
|
Freescale (Motorola)
Freescale Semiconductor, Inc
飞思卡尔半导体(中国)有限公司
|
| BLD6G22LS-50112 BLD6G22L-50112 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
|
NXP Semiconductors N.V.
|
| MHL21336 |
2110 MHz - 2170 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
FREESCALE SEMICONDUCTOR INC
|
| MHV5IC2215NR2 |
2170 MHz, 23 dBm, 28 V Single N鈥揅DMA
|
MOTOROLA
|
| PD21120R6 |
120 Watts, 2110-2170 MHz PD21120R6 PUSH/PULL LATERAL MOSFET
120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET
|
TRIQUINT SEMICONDUCTOR INC
|
| MRF21120R6 |
2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFET
|
Freescale (Motorola)
|
| PTF210301 PTF210301A PTF210301E |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 30 W 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
| SM2122-52LD |
2110-2170 MHz 160 Watt Peak Power Amplifier
|
Stealth Microwave, Inc.
|
| PTF210101M |
High Power RF LDMOS Field Effect Transistor 10 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| PTF211802A PTF211802E PTF211802 |
LDMOS RF Power Field Effect Transistor 180 W 2110-2170 MHz
LDMOS RF POWER FIELD EFFECT TRANSISTOR 180 W, 2110-2170 MHZ
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
|
http://
INFINEON[Infineon Technologies AG]
|
| MRF21010 |
MRF21010R1, MRF21010LSR1 2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs
|
Motorola
|
